PMEG3020EPAS115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2.5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 150pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package: DFN2020D-3
Mounting Type: Surface Mount
Package / Case: 3-PowerUDFN
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 2540+ | 8.69 грн |
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Технічний опис PMEG3020EPAS115 NXP USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 2.5 mA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 30 V, Operating Temperature - Junction: 150°C, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 150pF @ 1V, 1MHz, Technology: Schottky, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Supplier Device Package: DFN2020D-3, Mounting Type: Surface Mount, Package / Case: 3-PowerUDFN, Packaging: Bulk.