PMEG4010ESBC314 NXP
Виробник: NXP
Description: NXP - PMEG4010ESBC314 - MISCELLANEOUS MOSFETS
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Технічний опис PMEG4010ESBC314 NXP
Description: RECTIFIER DIODE, SCHOTTKY, Packaging: Bulk, Package / Case: 2-XDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.9 ns, Technology: Schottky, Capacitance @ Vr, F: 75pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DSN1006-2, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A, Current - Reverse Leakage @ Vr: 6 µA @ 20 V.
Інші пропозиції PMEG4010ESBC314
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PMEG4010ESBC314 | NXP USA Inc. |
Description: RECTIFIER DIODE, SCHOTTKY Packaging: Bulk Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.9 ns Technology: Schottky Capacitance @ Vr, F: 75pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DSN1006-2 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A Current - Reverse Leakage @ Vr: 6 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. |
| PMEG4010ESBC314 |
Виробник: NXP USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A
Current - Reverse Leakage @ Vr: 6 µA @ 20 V
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 1 A
Current - Reverse Leakage @ Vr: 6 µA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.