PMEG6010AESB315 NXP USA Inc.
Виробник: NXP USA Inc.
Description: DIODE SCHOTTKY 60V 1A DSN10062
Part Status: Active
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 625 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: DSN1006-2
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 2.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Bulk
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Технічний опис PMEG6010AESB315 NXP USA Inc.
Description: DIODE SCHOTTKY 60V 1A DSN10062, Part Status: Active, Current - Reverse Leakage @ Vr: 650 µA @ 60 V, Voltage - Forward (Vf) (Max) @ If: 625 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 60 V, Operating Temperature - Junction: 150°C, Supplier Device Package: DSN1006-2, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 20pF @ 10V, 1MHz, Technology: Schottky, Reverse Recovery Time (trr): 2.4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 2-XDFN, Packaging: Bulk.