Технічний опис PMEG6010CPAS-QX Nexperia
Description: PMEG6010CPAS-Q/SOT1061/HUSON3, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 ns, Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 1A, Supplier Device Package: DFN2020D-3, Operating Temperature - Junction: 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A, Current - Reverse Leakage @ Vr: 100 µA @ 60 V, Qualification: AEC-Q101.
Інші пропозиції PMEG6010CPAS-QX
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
PMEG6010CPAS-QX | Виробник : Nexperia |
![]() |
товару немає в наявності |
||
![]() |
PMEG6010CPAS-QX | Виробник : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 1A Supplier Device Package: DFN2020D-3 Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
|
![]() |
PMEG6010CPAS-QX | Виробник : Nexperia |
![]() |
товару немає в наявності |