PMF63UN,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 1.8A SOT323-3
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-70
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 275mW (Ta), 1.785W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Технічний опис PMF63UN,115 NXP USA Inc.
Description: MOSFET N-CH 20V 1.8A SOT323-3, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SC-70, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 275mW (Ta), 1.785W (Tc), Rds On (Max) @ Id, Vgs: 74mOhm @ 1.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції PMF63UN,115
| Фото | Назва | Виробник | Інформація |
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Ціна |
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PMF63UN,115 | NXP USA Inc. |
Description: MOSFET N-CH 20V 1.8A SOT323-3 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SC-70 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 275mW (Ta), 1.785W (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 1.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. |
| PMF63UN,115 |
|
Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 1.8A SOT323-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-70
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 275mW (Ta), 1.785W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 20V 1.8A SOT323-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-70
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 275mW (Ta), 1.785W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
В кошику
од. на суму грн.