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PMF63UN,115

PMF63UN,115 NXP USA Inc.

PMF63UN.pdf Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 1.8A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 1.8A, 4.5V
Power Dissipation (Max): 275mW (Ta), 1.785W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 10 V
на замовлення 24542 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4438+4.77 грн
Мінімальне замовлення: 4438
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Технічний опис PMF63UN,115 NXP USA Inc.

Description: MOSFET N-CH 20V 1.8A SOT323-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 74mOhm @ 1.8A, 4.5V, Power Dissipation (Max): 275mW (Ta), 1.785W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-70, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 10 V.

Інші пропозиції PMF63UN,115

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
PMF63UN,115 PMF63UN,115 Виробник : NXP Semiconductors 3392pmf63un.pdf Trans MOSFET N-CH 20V 1.8A 3-Pin SC-70 T/R
товар відсутній
PMF63UN,115 PMF63UN,115 Виробник : NXP USA Inc. PMF63UN.pdf Description: MOSFET N-CH 20V 1.8A SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 1.8A, 4.5V
Power Dissipation (Max): 275mW (Ta), 1.785W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 10 V
товар відсутній
PMF63UN,115 PMF63UN,115 Виробник : NXP USA Inc. PMF63UN.pdf Description: MOSFET N-CH 20V 1.8A SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 1.8A, 4.5V
Power Dissipation (Max): 275mW (Ta), 1.785W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 10 V
товар відсутній