PMF780SN,115 NXP USA Inc.
Виробник: NXP USA Inc.Description: MOSFET N-CH 60V 570MA SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 570mA (Ta)
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Power Dissipation (Max): 560mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
на замовлення 91124 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5323+ | 3.95 грн |
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Технічний опис PMF780SN,115 NXP USA Inc.
Description: MOSFET N-CH 60V 570MA SOT323-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 570mA (Ta), Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V, Power Dissipation (Max): 560mW (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SC-70, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V.
Інші пропозиції PMF780SN,115
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Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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PMF780SN,115 | Виробник : NXP Semiconductors |
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PMF780SN,115 | Виробник : NXP USA Inc. |
Description: MOSFET N-CH 60V 570MA SOT323-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 570mA (Ta) Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V Power Dissipation (Max): 560mW (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SC-70 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V |
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PMF780SN,115 | Виробник : Nexperia |
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