PMGD8000LN,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 30V 0.125A 6TSSOP
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 125mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Технічний опис PMGD8000LN,115 NXP USA Inc.
Description: MOSFET 2N-CH 30V 0.125A 6TSSOP, Supplier Device Package: 6-TSSOP, Vgs(th) (Max) @ Id: 1.5V @ 100µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V, Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V, Current - Continuous Drain (Id) @ 25°C: 125mA, Drain to Source Voltage (Vdss): 30V, Power - Max: 200mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції PMGD8000LN,115
| Фото | Назва | Виробник | Інформація |
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PMGD8000LN,115 | NXP USA Inc. |
Description: MOSFET 2N-CH 30V 0.125A 6TSSOP Supplier Device Package: 6-TSSOP Vgs(th) (Max) @ Id: 1.5V @ 100µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V Current - Continuous Drain (Id) @ 25°C: 125mA Drain to Source Voltage (Vdss): 30V Power - Max: 200mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| PMGD8000LN,115 |
|
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 30V 0.125A 6TSSOP
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 125mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 0.125A 6TSSOP
Supplier Device Package: 6-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 125mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.