PMGD8000LN,115 NXP USA Inc.
Виробник: NXP USA Inc.Description: MOSFET 2N-CH 30V 0.125A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 125mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: 6-TSSOP
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Технічний опис PMGD8000LN,115 NXP USA Inc.
Description: MOSFET 2N-CH 30V 0.125A 6TSSOP, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 125mA, Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V, Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V, Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: 6-TSSOP.
Інші пропозиції PMGD8000LN,115
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PMGD8000LN,115 | Виробник : NXP USA Inc. |
Description: MOSFET 2N-CH 30V 0.125A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 125mA Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: 6-TSSOP |
товару немає в наявності |