PMH550UNEH Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 770MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V
Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
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Технічний опис PMH550UNEH Nexperia USA Inc.
Description: MOSFET N-CH 30V 770MA DFN0606-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V, Power Dissipation (Max): 380mW (Ta), 2.8W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN0606-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V.
Інші пропозиції PMH550UNEH
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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PMH550UNEH | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 770MA DFN0606-3 Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: DFN0606-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 380mW (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 770mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PMH550UNEH | Nexperia |
MOSFETs SOT8001 N-CH 30V .77A |
товару немає в наявності |
Мінімальне замовлення: 13 шт В кошику од. на суму грн. |
| PMH550UNEH |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 770MA DFN0606-3
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN0606-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 770MA DFN0606-3
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN0606-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PMH550UNEH |
|
Виробник: Nexperia
MOSFETs SOT8001 N-CH 30V .77A
MOSFETs SOT8001 N-CH 30V .77A
товару немає в наявності
Мінімальне замовлення: 13 шт
В кошику
од. на суму грн.