PMN20EN,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 6.7A 6TSOP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-74
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 545mW (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tj)
| Кількість | Ціна |
|---|---|
| 2664+ | 8.35 грн |
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Технічний опис PMN20EN,115 NXP USA Inc.
Description: MOSFET N-CH 30V 6.7A 6TSOP, Rds On (Max) @ Id, Vgs: 20mOhm @ 6.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.7A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: SC-74, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 545mW (Ta).
Інші пропозиції PMN20EN,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
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PMN20EN,115 | NXP USA Inc. |
Description: MOSFET N-CH 30V 6.7A 6TSOP Rds On (Max) @ Id, Vgs: 20mOhm @ 6.7A, 10V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SC-74 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 545mW (Ta) |
товару немає в наявності |
В кошику од. на суму грн. |
| PMN20EN,115 |
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 6.7A 6TSOP
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-74
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 545mW (Ta)
Description: MOSFET N-CH 30V 6.7A 6TSOP
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-74
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 545mW (Ta)
товару немає в наявності
В кошику
од. на суму грн.