PMN25EN,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 6.2A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-74
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 540mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 3328+ | 6.51 грн |
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Технічний опис PMN25EN,115 NXP USA Inc.
Description: MOSFET N-CH 30V 6.2A 6TSOP, Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: SC-74, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 540mW (Ta), 6.25W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 6.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).
Інші пропозиції PMN25EN,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PMN25EN,115 | NXP USA Inc. |
Description: MOSFET N-CH 30V 6.2A 6TSOP Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SC-74 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 540mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.2A, 10V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| PMN25EN,115 |
|
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 6.2A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-74
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 540mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 6.2A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-74
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 540mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.