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PMN42XPE,115

PMN42XPE,115 Nexperia USA Inc.

PMN42XPE.pdf Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4A 6TSOP
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V
на замовлення 55980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1776+11.31 грн
Мінімальне замовлення: 1776
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Технічний опис PMN42XPE,115 Nexperia USA Inc.

Description: MOSFET P-CH 20V 4A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V, Power Dissipation (Max): 500mW (Ta), 8.33W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V.

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Ціна без ПДВ
PMN42XPE,115 PMN42XPE,115 Виробник : NEXPERIA 4381583731885698pmn42xpe.pdf Trans MOSFET P-CH 20V 4A 6-Pin TSOP T/R
товар відсутній
PMN42XPE,115 PMN42XPE,115 Виробник : Nexperia USA Inc. PMN42XPE.pdf Description: MOSFET P-CH 20V 4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V
товар відсутній
PMN42XPE,115 PMN42XPE,115 Виробник : Nexperia USA Inc. PMN42XPE.pdf Description: MOSFET P-CH 20V 4A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V
товар відсутній
PMN42XPE,115 PMN42XPE,115 Виробник : Nexperia PMN42XPE-1320572.pdf MOSFET PMN42XPE/SC-74/REEL 7" Q1/T1 *
товар відсутній