PMN42XPE,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
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Технічний опис PMN42XPE,115 Nexperia USA Inc.
Description: MOSFET P-CH 20V 4A 6TSOP, Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Power Dissipation (Max): 500mW (Ta), 8.33W (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).
Інші пропозиції PMN42XPE,115
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
PMN42XPE,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 4A 6TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
PMN42XPE,115 | Nexperia |
MOSFET PMN42XPE/SC-74/REEL 7" Q1/T1 * |
товару немає в наявності |
В кошику од. на суму грн. |
| PMN42XPE,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V
Description: MOSFET P-CH 20V 4A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| PMN42XPE,115 |
![]() |
Виробник: Nexperia
MOSFET PMN42XPE/SC-74/REEL 7" Q1/T1 *
MOSFET PMN42XPE/SC-74/REEL 7" Q1/T1 *
товару немає в наявності
В кошику
од. на суму грн.



