PMN50XP,165 NXP USA Inc.

Description: MOSFET P-CH 20V 4.8A 6TSOP, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: SC-74, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 2.2W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 2.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).