PMN50XP,165

PMN50XP,165 NXP Semiconductors


3412pmn50xp.pdf Виробник: NXP Semiconductors
Trans MOSFET P-CH 20V 4.8A 6-Pin TSOP
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Технічний опис PMN50XP,165 NXP Semiconductors

Description: MOSFET P-CH 20V 4.8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 2.2W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SC-74, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V.

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PMN50XP,165 PMN50XP,165 Виробник : NXP USA Inc. PMN50XP.pdf Description: MOSFET P-CH 20V 4.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 2.2W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SC-74
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
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PMN50XP,165 PMN50XP,165 Виробник : Nexperia PMN50XP-3083650.pdf MOSFET TRENCH 30V G3-TAPE2
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