| Кількість | Ціна |
|---|---|
| 9+ | 40.16 грн |
| 11+ | 30.03 грн |
| 100+ | 14.52 грн |
| 1000+ | 9.99 грн |
| 3000+ | 8.80 грн |
| 9000+ | 7.89 грн |
| 24000+ | 7.47 грн |
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Технічний опис PMN55ENEH Nexperia
Description: MOSFET N-CH 60V 4.5A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V, Power Dissipation (Max): 560mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V.
Інші пропозиції PMN55ENEH за ціною від 14.89 грн до 42.42 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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PMN55ENEH | Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 4.5A 6TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V Power Dissipation (Max): 560mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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| PMN55ENEH |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 4.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V
Power Dissipation (Max): 560mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V
Description: MOSFET N-CH 60V 4.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V
Power Dissipation (Max): 560mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 42.42 грн |
| 13+ | 24.96 грн |
| 50+ | 18.08 грн |
| 100+ | 14.89 грн |