| Кількість | Ціна |
|---|---|
| 10+ | 35.60 грн |
| 11+ | 30.03 грн |
| 100+ | 18.09 грн |
| 500+ | 14.18 грн |
| 1000+ | 11.52 грн |
| 3000+ | 8.24 грн |
| 9000+ | 7.68 грн |
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Технічний опис PMPB10XNE,115 Nexperia
Description: MOSFET N-CH 20V 9A DFN2020MD-6, Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції PMPB10XNE,115 за ціною від 19.96 грн до 55.77 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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PMPB10XNE,115 | Nexperia USA Inc. |
 Description: MOSFET N-CH 20V 9A DFN2020MD-6Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2797 шт: термін постачання 21-31 дні (днів) |
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| PMPB10XNE,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 9A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 9A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2797 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 55.77 грн |
| 10+ | 33.13 грн |
| 50+ | 24.19 грн |
| 100+ | 19.96 грн |