PMPB13XNEAX NEXPERIA
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 5A; Idm: 32A; ESD
Version: ESD
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 36nC
Technology: Trench
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 32A
Mounting: SMD
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 5A; Idm: 32A; ESD
Version: ESD
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 36nC
Technology: Trench
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 32A
Mounting: SMD
кількість в упаковці: 3000 шт
товару немає в наявності
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Технічний опис PMPB13XNEAX NEXPERIA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 5A; Idm: 32A; ESD, Version: ESD, Kind of package: reel; tape, Case: DFN2020MD-6; SOT1220, Drain-source voltage: 30V, Drain current: 5A, On-state resistance: 27mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 36nC, Technology: Trench, Kind of channel: enhancement, Gate-source voltage: ±8V, Pulsed drain current: 32A, Mounting: SMD, кількість в упаковці: 3000 шт.
Інші пропозиції PMPB13XNEAX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PMPB13XNEAX | Виробник : Nexperia |
 MOSFET PMPB13XNEA |
товару немає в наявності |
||
| PMPB13XNEAX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 5A; Idm: 32A; ESD Version: ESD Kind of package: reel; tape Case: DFN2020MD-6; SOT1220 Drain-source voltage: 30V Drain current: 5A On-state resistance: 27mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 36nC Technology: Trench Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 32A Mounting: SMD |
товару немає в наявності |