PMPB14XNX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 8.1A DFN2020MD-6
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 3.8W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.43 грн |
| 10+ | 33.66 грн |
| 50+ | 24.56 грн |
| 100+ | 20.28 грн |
Відгуки про товар
Написати відгук
Технічний опис PMPB14XNX Nexperia USA Inc.
Description: MOSFET N-CH 40V 8.1A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 8.1A, 4.5V, Power Dissipation (Max): 3.8W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020MD-6, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 20 V.
