| Кількість | Ціна |
|---|---|
| 9+ | 36.33 грн |
| 14+ | 24.01 грн |
| 100+ | 11.03 грн |
| 1000+ | 9.43 грн |
| 3000+ | 7.33 грн |
Відгуки про товар
Написати відгук
Технічний опис PMPB14XPX Nexperia
Description: MOSFET DFN2020MD-6, Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2303 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 3.9W (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 8.6A, 4.5V.
Інші пропозиції PMPB14XPX за ціною від 18.73 грн до 52.63 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMPB14XPX | Nexperia USA Inc. |
 Description: MOSFET DFN2020MD-6Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 3.9W (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 8.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 2303 pF @ 6 V Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2529 шт: термін постачання 21-31 дні (днів) |
|
| PMPB14XPX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET DFN2020MD-6
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 3.9W (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2303 pF @ 6 V
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET DFN2020MD-6
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 3.9W (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2303 pF @ 6 V
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2529 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 52.63 грн |
| 10+ | 31.24 грн |
| 50+ | 22.71 грн |
| 100+ | 18.73 грн |