PMPB14XPX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET DFN2020MD-6
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 3.9W (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2303 pF @ 6 V
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.57 грн |
| 12+ | 24.98 грн |
| 100+ | 15.98 грн |
| 500+ | 11.34 грн |
| 1000+ | 10.16 грн |
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Технічний опис PMPB14XPX Nexperia USA Inc.
Description: MOSFET DFN2020MD-6, Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2303 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 3.9W (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 8.6A, 4.5V.
