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Технічний опис PMPB20UN,115 Nexperia
Description: MOSFET N-CH 20V 6.6A 6DFN, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-DFN2020MD (2x2), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 6.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V.
Інші пропозиції PMPB20UN,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
PMPB20UN,115 | NXP USA Inc. |
Description: MOSFET N-CH 20V 6.6A 6DFNOperating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-DFN2020MD (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V |
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В кошику од. на суму грн. |
| PMPB20UN,115 |
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Виробник: NXP USA Inc.
Description: MOSFET N-CH 20V 6.6A 6DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-DFN2020MD (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET N-CH 20V 6.6A 6DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-DFN2020MD (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
товару немає в наявності
В кошику
од. на суму грн.



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