PMPB215ENEAHP Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: PMPB215ENEA/SOT1220/SOT1220
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V
Qualification: AEC-Q101
на замовлення 9609 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.75 грн |
| 14+ | 23.35 грн |
| 100+ | 15.79 грн |
| 500+ | 11.56 грн |
| 1000+ | 10.48 грн |
| 2000+ | 9.56 грн |
| 5000+ | 8.40 грн |
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Технічний опис PMPB215ENEAHP Nexperia USA Inc.
Description: PMPB215ENEA/SOT1220/SOT1220, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V, Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції PMPB215ENEAHP
| Фото | Назва | Виробник | Інформація |
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PMPB215ENEAHP | Виробник : Nexperia USA Inc. |
Description: PMPB215ENEA/SOT1220/SOT1220 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
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PMPB215ENEAHP | Виробник : Nexperia |
MOSFETs 80 V, single N-channel Trench MOSFET |
товару немає в наявності |