на замовлення 5816 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.56 грн |
| 10+ | 32.66 грн |
| 100+ | 19.37 грн |
| 500+ | 14.51 грн |
| 1000+ | 10.88 грн |
| 3000+ | 9.92 грн |
| 9000+ | 8.69 грн |
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Технічний опис PMPB24EPX Nexperia
Description: MOSFET P-CH 30V 6.4A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 6.4A, 10V, Power Dissipation (Max): 1.8W (Ta), 15.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN2020MD-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1069 pF @ 15 V.
Інші пропозиції PMPB24EPX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PMPB24EPX | Виробник : Nexperia |
 Trans MOSFET P-CH 30V 6.4A 6-Pin DFN-MD EP T/R |
товару немає в наявності |
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PMPB24EPX | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 6.4A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 6.4A, 10V Power Dissipation (Max): 1.8W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1069 pF @ 15 V |
товару немає в наявності |
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PMPB24EPX | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 6.4A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 6.4A, 10V Power Dissipation (Max): 1.8W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1069 pF @ 15 V |
товару немає в наявності |