на замовлення 5816 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 47.32 грн |
| 10+ | 38.10 грн |
| 100+ | 22.59 грн |
| 500+ | 16.93 грн |
| 1000+ | 12.69 грн |
| 3000+ | 11.58 грн |
| 9000+ | 10.14 грн |
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Технічний опис PMPB24EPX Nexperia
Description: MOSFET P-CH 30V 6.4A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 6.4A, 10V, Power Dissipation (Max): 1.8W (Ta), 15.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN2020MD-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1069 pF @ 15 V.
Інші пропозиції PMPB24EPX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PMPB24EPX | Виробник : Nexperia |
 Trans MOSFET P-CH 30V 6.4A 6-Pin DFN-MD EP T/R |
товару немає в наявності |
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PMPB24EPX | Виробник : NEXPERIA |
Trans MOSFET P-CH 30V 6.4A 6-Pin DFN-MD EP T/R |
товару немає в наявності |
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PMPB24EPX | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 6.4A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 6.4A, 10V Power Dissipation (Max): 1.8W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1069 pF @ 15 V |
товару немає в наявності |
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PMPB24EPX | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 6.4A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 6.4A, 10V Power Dissipation (Max): 1.8W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1069 pF @ 15 V |
товару немає в наявності |
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| PMPB24EPX | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; Idm: -26A; ESD Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.1A Pulsed drain current: -26A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |