| Кількість | Ціна |
|---|---|
| 7+ | 51.16 грн |
| 10+ | 32.60 грн |
| 50+ | 24.09 грн |
| 100+ | 17.46 грн |
| 500+ | 15.64 грн |
| 1000+ | 12.29 грн |
| 3000+ | 9.71 грн |
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Технічний опис PMPB27EP,115 Nexperia
Description: MOSFET P-CH 30V 6.1A DFN2020MD-6, Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 6.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції PMPB27EP,115 за ціною від 19.16 грн до 54.20 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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PMPB27EP,115 | Nexperia USA Inc. |
 Description: MOSFET P-CH 30V 6.1A DFN2020MD-6Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1335 шт: термін постачання 21-31 дні (днів) |
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| PMPB27EP,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 6.1A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 6.1A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1335 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 54.20 грн |
| 10+ | 31.92 грн |
| 50+ | 23.24 грн |
| 100+ | 19.16 грн |