| Кількість | Ціна |
|---|---|
| 7+ | 50.35 грн |
| 10+ | 49.06 грн |
| 3000+ | 10.40 грн |
| 9000+ | 7.47 грн |
| 24000+ | 7.26 грн |
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Технічний опис PMPB48EP,115 Nexperia
Description: MOSFET P-CH 30V 4.7A DFN2020MD-6, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції PMPB48EP,115
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
PMPB48EP,115 | Nexperia USA Inc. |
 Description: MOSFET P-CH 30V 4.7A DFN2020MD-6Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
|
PMPB48EP,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 4.7A DFN2020MD-6 Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| PMPB48EP,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 4.7A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 4.7A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMPB48EP,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 4.7A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 4.7A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.