PMPB55ENEAX Nexperia

Description: MOSFET N-CH 60V 4A DFN2020MD-6, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Packaging: Tape & Reel (TR), Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Power Dissipation (Max): 1.65W (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Qualification: AEC-Q101, Grade: Automotive.