PMPB85ENEAX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 12.09 грн |
| 6000+ | 10.63 грн |
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Технічний опис PMPB85ENEAX Nexperia USA Inc.
Description: MOSFET N-CH 60V 3A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V, Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції PMPB85ENEAX за ціною від 6.21 грн до 52.63 грн
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PMPB85ENEAX | Nexperia |
MOSFETs SOT1220 N-CH 60V 3A |
на замовлення 4313 шт: термін постачання 21-30 дні (днів) |
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PMPB85ENEAX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 3A DFN2020MD-6 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 2.7V @ 250µA Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 21397 шт: термін постачання 21-31 дні (днів) |
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| PMPB85ENEAX |
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Виробник: Nexperia
MOSFETs SOT1220 N-CH 60V 3A
MOSFETs SOT1220 N-CH 60V 3A
на замовлення 4313 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 32.26 грн |
| 16+ | 20.32 грн |
| 100+ | 9.50 грн |
| 500+ | 9.22 грн |
| 1000+ | 9.08 грн |
| 3000+ | 6.42 грн |
| 6000+ | 6.21 грн |
| PMPB85ENEAX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 21397 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 52.63 грн |
| 10+ | 31.47 грн |
| 50+ | 22.94 грн |
| 100+ | 18.91 грн |