Технічний опис PMT200EPEAX Nexperia
Description: MOSFET P-CH 70V 2.4A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 167mOhm @ 2.4A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 70 V, Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 822 pF @ 35 V.
Інші пропозиції PMT200EPEAX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PMT200EPEAX | Виробник : NEXPERIA |
 Trans MOSFET P-CH 70V 2.4A Automotive AEC-Q101 4-Pin(3+Tab) SC-73 T/R |
товар відсутній |
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PMT200EPEAX | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 70V 2.4A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 167mOhm @ 2.4A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 822 pF @ 35 V |
товар відсутній |