| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 24.48 грн |
| 20+ | 16.59 грн |
| 100+ | 8.77 грн |
| 1000+ | 8.15 грн |
| 3000+ | 6.56 грн |
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Технічний опис PMV100ENEAR Nexperia
Description: MOSFET N-CH 30V 3A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V, Power Dissipation (Max): 460mW (Ta), 4.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції PMV100ENEAR за ціною від 8.95 грн до 24.85 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PMV100ENEAR | Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 3A TO236ABQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 460mW (Ta), 4.5W (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 1517 шт: термін постачання 21-31 дні (днів) |
|
| PMV100ENEAR |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 460mW (Ta), 4.5W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 3A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 460mW (Ta), 4.5W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 1517 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.85 грн |
| 19+ | 15.78 грн |
| 100+ | 9.64 грн |
| 500+ | 8.95 грн |