PMV13XNEAR Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: PMV13XNEA - 20 V, N-CHANNEL TREN
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7.3A, 8V
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V
Qualification: AEC-Q101
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Технічний опис PMV13XNEAR Nexperia USA Inc.
Description: NEXPERIA - PMV13XNEAR - Leistungs-MOSFET, n-Kanal, 20 V, 7.3 A, 0.011 ohm, SOT-23, Oberflächenmontage, tariffCode: 85412100, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 7.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 950mV, euEccn: NLR, Verlustleistung: 610mW, Bauform - Transistor: SOT-23, Anzahl der Pins: 3Pins, Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 8V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.011ohm, SVHC: No SVHC (27-Jun-2024).
Інші пропозиції PMV13XNEAR за ціною від 9.14 грн до 35.41 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PMV13XNEAR | Nexperia USA Inc. |
Description: PMV13XNEA - 20 V, N-CHANNEL TREN Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 610mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 7.3A, 8V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 4003 шт: термін постачання 21-31 дні (днів) |
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PMV13XNEAR | Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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PMV13XNEAR | NEXPERIA |
Description: NEXPERIA - PMV13XNEAR - Leistungs-MOSFET, n-Kanal, 20 V, 7.3 A, 0.011 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 7.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 610mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 8V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (27-Jun-2024) |
на замовлення 2582 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. |
| PMV13XNEAR |
|
Виробник: Nexperia USA Inc.
Description: PMV13XNEA - 20 V, N-CHANNEL TREN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7.3A, 8V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: PMV13XNEA - 20 V, N-CHANNEL TREN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7.3A, 8V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 4003 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.41 грн |
| 15+ | 20.38 грн |
| 100+ | 11.15 грн |
| 500+ | 10.24 грн |
| 1000+ | 9.14 грн |
| PMV13XNEAR |
|
Виробник: Nexperia
MOSFETs The factory is currently not accepting orders for this product.
MOSFETs The factory is currently not accepting orders for this product.
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
| PMV13XNEAR |
|
Виробник: NEXPERIA
Description: NEXPERIA - PMV13XNEAR - Leistungs-MOSFET, n-Kanal, 20 V, 7.3 A, 0.011 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 950mV
euEccn: NLR
Verlustleistung: 610mW
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 8V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.011ohm
SVHC: No SVHC (27-Jun-2024)
Description: NEXPERIA - PMV13XNEAR - Leistungs-MOSFET, n-Kanal, 20 V, 7.3 A, 0.011 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 950mV
euEccn: NLR
Verlustleistung: 610mW
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 8V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.011ohm
SVHC: No SVHC (27-Jun-2024)
на замовлення 2582 шт:
термін постачання 21-31 дні (днів)