PMV164ENEAR Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 1.6A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 640mW (Ta), 5.8W (Tc)
Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.59 грн |
| 6000+ | 4.86 грн |
| 9000+ | 4.59 грн |
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Технічний опис PMV164ENEAR Nexperia USA Inc.
Description: MOSFET N-CH 60V 1.6A TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Qualification: AEC-Q101, Grade: Automotive, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Power Dissipation (Max): 640mW (Ta), 5.8W (Tc), Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції PMV164ENEAR за ціною від 3.31 грн до 26.41 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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PMV164ENEAR | Nexperia |
MOSFETs SOT23 N-CH 60V 1.6A |
на замовлення 762 шт: термін постачання 21-30 дні (днів) |
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PMV164ENEAR | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 1.6A TO236AB Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.7V @ 250µA Power Dissipation (Max): 640mW (Ta), 5.8W (Tc) Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16579 шт: термін постачання 21-31 дні (днів) |
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| PMV164ENEAR |
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Виробник: Nexperia
MOSFETs SOT23 N-CH 60V 1.6A
MOSFETs SOT23 N-CH 60V 1.6A
на замовлення 762 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.97 грн |
| 22+ | 15.00 грн |
| 100+ | 5.94 грн |
| 1000+ | 5.32 грн |
| 3000+ | 4.21 грн |
| 6000+ | 3.59 грн |
| 9000+ | 3.31 грн |
| PMV164ENEAR |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 1.6A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 640mW (Ta), 5.8W (Tc)
Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 1.6A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 640mW (Ta), 5.8W (Tc)
Rds On (Max) @ Id, Vgs: 218mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16579 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.41 грн |
| 20+ | 15.56 грн |
| 100+ | 9.75 грн |
| 500+ | 6.79 грн |
| 1000+ | 6.03 грн |