| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 31.89 грн |
| 16+ | 20.32 грн |
| 100+ | 9.39 грн |
| 500+ | 8.77 грн |
| 1000+ | 6.77 грн |
| 3000+ | 5.73 грн |
| 6000+ | 5.66 грн |
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Технічний опис PMV16XNR Nexperia
Description: MOSFET N-CH 20V 6.8A TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 510mW (Ta), 6.94W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 6.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції PMV16XNR за ціною від 14.35 грн до 40.38 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PMV16XNR | Nexperia USA Inc. |
 Description: MOSFET N-CH 20V 6.8A TO236ABInput Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 510mW (Ta), 6.94W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 2216 шт: термін постачання 21-31 дні (днів) |
|
| PMV16XNR |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 6.8A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 510mW (Ta), 6.94W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 6.8A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 510mW (Ta), 6.94W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 2216 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.38 грн |
| 13+ | 24.16 грн |
| 50+ | 17.46 грн |
| 100+ | 14.35 грн |