PMV230ENEAR Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 60V 1.5A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 222mOhm @ 1.5A, 10V
Power Dissipation (Max): 480mW (Ta), 1.45W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 30 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.4 грн |
| 6000+ | 5.08 грн |
Відгуки про товар
Написати відгук
Технічний опис PMV230ENEAR Nexperia USA Inc.
Description: MOSFET N-CH 60V 1.5A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 222mOhm @ 1.5A, 10V, Power Dissipation (Max): 480mW (Ta), 1.45W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції PMV230ENEAR за ціною від 3.99 грн до 26.66 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PMV230ENEAR | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 1.5A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 222mOhm @ 1.5A, 10V Power Dissipation (Max): 480mW (Ta), 1.45W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 10232 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
PMV230ENEAR | Виробник : Nexperia |
MOSFET PMV230ENEA/SOT23/TO-236AB |
на замовлення 34045 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
PMV230ENEAR | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 900mA; Idm: 5.9A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.9A Pulsed drain current: 5.9A Case: SOT23; TO236AB On-state resistance: 441mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||||||
|
|
PMV230ENEAR | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 900mA; Idm: 5.9A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.9A Pulsed drain current: 5.9A Case: SOT23; TO236AB On-state resistance: 441mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level |
товар відсутній |