PMV240SPR Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 100V 1.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 365mOhm @ 1.2A, 10V
Power Dissipation (Max): 710mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.10 грн |
| 6000+ | 9.00 грн |
| 9000+ | 8.07 грн |
| 15000+ | 7.41 грн |
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Технічний опис PMV240SPR Nexperia USA Inc.
Description: MOSFET P-CH 100V 1.2A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 365mOhm @ 1.2A, 10V, Power Dissipation (Max): 710mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V.
Інші пропозиції PMV240SPR за ціною від 10.96 грн до 36.06 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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PMV240SPR | Nexperia USA Inc. |
Description: MOSFET P-CH 100V 1.2A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 365mOhm @ 1.2A, 10V Power Dissipation (Max): 710mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V |
на замовлення 15547 шт: термін постачання 21-31 дні (днів) |
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PMV240SPR | Nexperia |
MOSFETs SOT23 100V 1.2A |
на замовлення 962 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PMV240SPR |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 100V 1.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 365mOhm @ 1.2A, 10V
Power Dissipation (Max): 710mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
Description: MOSFET P-CH 100V 1.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 365mOhm @ 1.2A, 10V
Power Dissipation (Max): 710mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
на замовлення 15547 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.06 грн |
| 13+ | 24.00 грн |
| 100+ | 17.16 грн |
| 500+ | 12.21 грн |
| 1000+ | 10.96 грн |