Інші пропозиції PMV280ENEAR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
PMV280ENEAR | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 1.1A TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 385mOhm @ 1.1A, 10V Power Dissipation (Max): 700mW (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
PMV280ENEAR | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 1.1A TO236ABInput Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.7V @ 250µA Power Dissipation (Max): 700mW (Ta), 6W (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. |
|
PMV280ENEAR | Nexperia |
MOSFETs SOT23 100V 1.1A N-CH TRENCH |
товару немає в наявності |
Мінімальне замовлення: 11 шт В кошику од. на суму грн. |
| PMV280ENEAR |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 1.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.1A, 10V
Power Dissipation (Max): 700mW (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.1A, 10V
Power Dissipation (Max): 700mW (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMV280ENEAR |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 1.1A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 700mW (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 100V 1.1A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 700mW (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| PMV280ENEAR |
![]() |
Виробник: Nexperia
MOSFETs SOT23 100V 1.1A N-CH TRENCH
MOSFETs SOT23 100V 1.1A N-CH TRENCH
товару немає в наявності
Мінімальне замовлення: 11 шт
В кошику
од. на суму грн.




