| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.98 грн |
| 18+ | 18.66 грн |
| 100+ | 6.56 грн |
| 1000+ | 5.94 грн |
| 3000+ | 4.00 грн |
| 9000+ | 3.87 грн |
| 24000+ | 3.73 грн |
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Технічний опис PMV30UN2R Nexperia
Description: MOSFET N-CH 20V 4.2A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 4.2A, 4.5V, Power Dissipation (Max): 490mW (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V.