Технічний опис PMV30UN2VL NEXPERIA
Description: MOSFET N-CH 20V 5.4A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 4.2A, 4.5V, Power Dissipation (Max): 490mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V.
Інші пропозиції PMV30UN2VL
| Фото | Назва | Виробник | Інформація |
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PMV30UN2VL | Виробник : Nexperia |
 Trans MOSFET N-CH 20V 5.4A 3-Pin SOT-23 T/R |
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PMV30UN2VL | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 18A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.7A Pulsed drain current: 18A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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PMV30UN2VL | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 5.4A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 4.2A, 4.5V Power Dissipation (Max): 490mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V |
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PMV30UN2VL | Виробник : Nexperia |
MOSFET PMV30UN2/SOT23/TO-236AB |
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PMV30UN2VL | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.7A; Idm: 18A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.7A Pulsed drain current: 18A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
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