PMV30XPAR Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.9A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.35 грн |
| 6000+ | 8.20 грн |
| 9000+ | 7.79 грн |
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Технічний опис PMV30XPAR Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.9A TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 610mW (Ta), 8.3W (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Qualification: AEC-Q101, Grade: Automotive, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції PMV30XPAR за ціною від 9.95 грн до 41.54 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PMV30XPAR | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 4.9A TO236ABFET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Part Status: Active Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 610mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) |
на замовлення 12810 шт: термін постачання 21-31 дні (днів) |
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PMV30XPAR | Nexperia |
MOSFETs SOT23 P CHAN 20V |
на замовлення 6590 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PMV30XPAR |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.9A TO236AB
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Description: MOSFET P-CH 20V 4.9A TO236AB
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
на замовлення 12810 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.54 грн |
| 13+ | 24.68 грн |
| 100+ | 15.74 грн |
| 500+ | 11.13 грн |
| 1000+ | 9.95 грн |



