PMV37EN2R Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.5A TO236AB
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 16+ | 19.85 грн |
| 50+ | 14.30 грн |
| 100+ | 11.74 грн |
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Технічний опис PMV37EN2R Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.5A TO236AB, Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 510mW (Ta), 5W (Tc).
