на замовлення 9115 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.34 грн |
| 11+ | 28.71 грн |
| 100+ | 18.63 грн |
| 1000+ | 14.62 грн |
| 2500+ | 11.28 грн |
| 10000+ | 7.21 грн |
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Технічний опис PMV48XPVL Nexperia
Description: MOSFET P-CH 20V 3.5A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V, Power Dissipation (Max): 510mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: TO-236AB, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V.
Інші пропозиції PMV48XPVL
| Фото | Назва | Виробник | Інформація |
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PMV48XPVL | Виробник : Nexperia |
 Trans MOSFET P-CH 20V 3.5A 3-Pin SOT-23 T/R |
товар відсутній |
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PMV48XPVL | Виробник : NEXPERIA |
Trans MOSFET P-CH 20V 3.5A 3-Pin SOT-23 T/R |
товар відсутній |
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PMV48XPVL | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.2A; Idm: -14A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Power dissipation: 930mW Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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PMV48XPVL | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 3.5A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V Power Dissipation (Max): 510mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: TO-236AB Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
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PMV48XPVL | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.2A; Idm: -14A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Power dissipation: 930mW Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |