PMV52ENER Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: PMV52ENE/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Відгуки про товар
Написати відгук
Технічний опис PMV52ENER Nexperia USA Inc.
Description: PMV52ENE/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V, Power Dissipation (Max): 630mW (Ta), 5.7W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V.
Інші пропозиції PMV52ENER за ціною від 5.64 грн до 39.19 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMV52ENER | Nexperia |
MOSFET PMV52ENE/SOT23/TO-236AB |
на замовлення 5658 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
PMV52ENER | Nexperia USA Inc. |
Description: PMV52ENE/SOT23/TO-236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V Power Dissipation (Max): 630mW (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V |
на замовлення 4613 шт: термін постачання 21-31 дні (днів) |
|
| PMV52ENER |
|
Виробник: Nexperia
MOSFET PMV52ENE/SOT23/TO-236AB
MOSFET PMV52ENE/SOT23/TO-236AB
на замовлення 5658 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.69 грн |
| 14+ | 23.00 грн |
| 100+ | 13.66 грн |
| 1000+ | 7.94 грн |
| 3000+ | 6.69 грн |
| 9000+ | 6.13 грн |
| 24000+ | 5.64 грн |
| PMV52ENER |
|
Виробник: Nexperia USA Inc.
Description: PMV52ENE/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Description: PMV52ENE/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
на замовлення 4613 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.19 грн |
| 13+ | 23.40 грн |
| 100+ | 14.87 грн |
| 500+ | 10.48 грн |
| 1000+ | 9.37 грн |