PMV60EN,215 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 4.7A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 280mW (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис PMV60EN,215 NXP USA Inc.
Description: MOSFET N-CH 30V 4.7A TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23 (TO-236AB), Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 280mW (Tj), Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції PMV60EN,215
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PMV60EN,215 | NXP USA Inc. |
Description: MOSFET N-CH 30V 4.7A TO236AB Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 (TO-236AB) Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 280mW (Tj) Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
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PMV60EN,215 | Nexperia |
 MOSFETs N-CH TRENCH 30V |
товару немає в наявності |
В кошику од. на суму грн. |
| PMV60EN,215 |
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 4.7A TO236AB
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 280mW (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 30V 4.7A TO236AB
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 280mW (Tj)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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В кошику
од. на суму грн.
| PMV60EN,215 |
|
Виробник: Nexperia
MOSFETs N-CH TRENCH 30V
MOSFETs N-CH TRENCH 30V
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од. на суму грн.