PMV65UN,215 Nexperia

Description: MOSFET N-CH 20V 2.2A TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 183 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Obsolete, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Supplier Device Package: SOT-23 (TO-236AB), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 310mW (Ta), 2.17W (Tc), Rds On (Max) @ Id, Vgs: 76mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).