PMV90EN,215 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 1.9A TO236AB
Rds On (Max) @ Id, Vgs: 84mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 310mW (Ta), 2.09W (Tc)
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Технічний опис PMV90EN,215 NXP USA Inc.
Description: MOSFET N-CH 30V 1.9A TO236AB, Rds On (Max) @ Id, Vgs: 84mOhm @ 1.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23 (TO-236AB), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 310mW (Ta), 2.09W (Tc).
Інші пропозиції PMV90EN,215
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PMV90EN,215 | NXP USA Inc. |
Description: MOSFET N-CH 30V 1.9A TO236AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 (TO-236AB) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 310mW (Ta), 2.09W (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 1.9A, 10V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
товару немає в наявності |
В кошику од. на суму грн. |
| PMV90EN,215 |
|
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 1.9A TO236AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 310mW (Ta), 2.09W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Description: MOSFET N-CH 30V 1.9A TO236AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 310mW (Ta), 2.09W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
товару немає в наявності
В кошику
од. на суму грн.