PMWD15UN,518 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 20V 11.6A 8TSSOP
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 700mV @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 11.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 4.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис PMWD15UN,518 NXP USA Inc.
Description: MOSFET 2N-CH 20V 11.6A 8TSSOP, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 700mV @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 18.5mOhm @ 5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V, Current - Continuous Drain (Id) @ 25°C: 11.6A, Drain to Source Voltage (Vdss): 20V, Power - Max: 4.2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції PMWD15UN,518
| Фото | Назва | Виробник | Інформація |
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Ціна |
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PMWD15UN,518 | NXP USA Inc. |
Description: MOSFET 2N-CH 20V 11.6A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11.6A Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V Rds On (Max) @ Id, Vgs: 18.5mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 1mA Supplier Device Package: 8-TSSOP |
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| PMWD15UN,518 |
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 20V 11.6A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 1mA
Supplier Device Package: 8-TSSOP
Description: MOSFET 2N-CH 20V 11.6A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 1mA
Supplier Device Package: 8-TSSOP
товару немає в наявності
В кошику
од. на суму грн.