PMWD16UN,518 NXP Semiconductors

Description: MOSFET 2N-CH 20V 9.9A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 9.9A, Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V, Rds On (Max) @ Id, Vgs: 19mOhm @ 3.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 700mV @ 1mA, Supplier Device Package: 8-TSSOP.