PMX100UNZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: PMX100UN/SOT8013/DFN0603-3
Input Capacitance (Ciss) (Max) @ Vds: 144 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN0603-3 (SOT8013)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 300mW (Ta), 4.7W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 9+ | 37.98 грн |
| 14+ | 22.63 грн |
| 50+ | 16.36 грн |
| 100+ | 13.43 грн |
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Технічний опис PMX100UNZ Nexperia USA Inc.
Description: PMX100UN/SOT8013/DFN0603-3, Input Capacitance (Ciss) (Max) @ Vds: 144 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: DFN0603-3 (SOT8013), Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 300mW (Ta), 4.7W (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 0201 (0603 Metric), Packaging: Tape & Reel (TR).
