PMX800ENEZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: PMX800ENEZ
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 400mA, 10V
Power Dissipation (Max): 300mW (Ta), 4.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN0603-3 (SOT8013)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
на замовлення 14950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.34 грн |
| 16+ | 19.80 грн |
| 100+ | 12.52 грн |
| 500+ | 8.78 грн |
| 1000+ | 7.82 грн |
| 2000+ | 7.01 грн |
| 5000+ | 6.03 грн |
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Технічний опис PMX800ENEZ Nexperia USA Inc.
Description: PMX800ENEZ, Packaging: Tape & Reel (TR), Package / Case: 0201 (0603 Metric), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 400mA, 10V, Power Dissipation (Max): 300mW (Ta), 4.7W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN0603-3 (SOT8013), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V.
Інші пропозиції PMX800ENEZ
| Фото | Назва | Виробник | Інформація |
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PMX800ENEZ | Виробник : Nexperia USA Inc. |
Description: PMX800ENEZ Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 400mA, 10V Power Dissipation (Max): 300mW (Ta), 4.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN0603-3 (SOT8013) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V |
товару немає в наявності |
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PMX800ENEZ | Виробник : Nexperia |
MOSFET new products in DFN0603 |
товару немає в наявності |