PMXB75UPE147 NXP USA Inc.
Виробник: NXP USA Inc.
Description: P-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 4729+ | 4.34 грн |
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Технічний опис PMXB75UPE147 NXP USA Inc.
Description: P-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: DFN1010D-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 317mW (Ta), 8.33W (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Packaging: Bulk.