на замовлення 26 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.13 грн |
| 15+ | 22.09 грн |
| 50+ | 13.79 грн |
| 100+ | 11.94 грн |
| 1000+ | 11.87 грн |
| 5000+ | 6.11 грн |
Відгуки про товар
Написати відгук
Технічний опис PMXB75UPEZ Nexperia
Description: MOSFET P-CH 20V 2.9A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V, Power Dissipation (Max): 317mW (Ta), 8.33W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN1010D-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V.
Інші пропозиції PMXB75UPEZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
PMXB75UPEZ | Виробник : Nexperia USA Inc. |
 Description: MOSFET P-CH 20V 2.9A DFN1010D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V Power Dissipation (Max): 317mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V |
товару немає в наявності |
|
|
|
PMXB75UPEZ | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2.9A DFN1010D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V Power Dissipation (Max): 317mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V |
товару немає в наявності |