PMZ130UNEYL Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.8A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.17 грн |
| 15+ | 20.12 грн |
| 50+ | 14.51 грн |
| 100+ | 11.90 грн |
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Технічний опис PMZ130UNEYL Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.8A DFN1006-3, Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-883, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 350mW (Ta), 6.25W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR).
Інші пропозиції PMZ130UNEYL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
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PMZ130UNEYL | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 1.8A DFN1006-3 Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SOT-883 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
 |
PMZ130UNEYL | Nexperia |
MOSFETs SOT883 N-CH 20V 1.8A |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. |
| PMZ130UNEYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.2A; Idm: 8A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.2A Pulsed drain current: 8A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 1.6nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Technology: Trench |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| PMZ130UNEYL |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1.8A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 1.8A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PMZ130UNEYL |
|
Виробник: Nexperia
MOSFETs SOT883 N-CH 20V 1.8A
MOSFETs SOT883 N-CH 20V 1.8A
товару немає в наявності
Мінімальне замовлення: 8 шт
В кошику
од. на суму грн.
| PMZ130UNEYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.2A; Idm: 8A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 8A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.2A; Idm: 8A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 8A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.