PMZ390UN,315 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1.78A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.78A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Description: MOSFET N-CH 30V 1.78A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.78A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
на замовлення 130000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10000+ | 6.02 грн |
30000+ | 5.72 грн |
50000+ | 4.86 грн |
100000+ | 4.49 грн |
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Технічний опис PMZ390UN,315 Nexperia USA Inc.
Description: MOSFET N-CH 30V 1.78A DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.78A (Tc), Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-883, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V.
Інші пропозиції PMZ390UN,315 за ціною від 5.06 грн до 33.25 грн
Фото | Назва | Виробник | Інформація |
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PMZ390UN,315 | Виробник : Nexperia | Trans MOSFET N-CH 30V 1.78A 3-Pin DFN T/R |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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PMZ390UN,315 | Виробник : Nexperia | Trans MOSFET N-CH 30V 1.78A 3-Pin DFN T/R |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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PMZ390UN,315 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 1.78A DFN1006-3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.78A (Tc) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V |
на замовлення 137180 шт: термін постачання 21-31 дні (днів) |
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PMZ390UN,315 | Виробник : Nexperia | MOSFET PMZ390UN/SOT883/XQFN3 |
на замовлення 39762 шт: термін постачання 21-30 дні (днів) |
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PMZ390UN,315 | Виробник : Nexperia | Trans MOSFET N-CH 30V 1.78A 3-Pin DFN T/R |
товар відсутній |
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PMZ390UN,315 | Виробник : NEXPERIA | Trans MOSFET N-CH 30V 1.78A 3-Pin DFN T/R |
товар відсутній |
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PMZ390UN,315 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 1.3nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 4A Mounting: SMD Case: DFN1006-3; SOT883 Drain-source voltage: 30V Drain current: 0.6A On-state resistance: 0.79Ω кількість в упаковці: 10000 шт |
товар відсутній |
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PMZ390UN,315 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 1.3nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 4A Mounting: SMD Case: DFN1006-3; SOT883 Drain-source voltage: 30V Drain current: 0.6A On-state resistance: 0.79Ω |
товар відсутній |