| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.99 грн |
| 18+ | 17.87 грн |
| 100+ | 7.59 грн |
| 500+ | 7.45 грн |
| 1000+ | 5.36 грн |
| 2500+ | 4.88 грн |
| 5000+ | 4.39 грн |
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Технічний опис PMZB200UNEYL Nexperia
Description: MOSFET N-CH 30V 1.4A DFN1006B-3, Packaging: Tape & Reel (TR), Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: DFN1006B-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 350mW (Ta), 6.25W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V.
Інші пропозиції PMZB200UNEYL за ціною від 11.73 грн до 33.70 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PMZB200UNEYL | Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 1.4A DFN1006B-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V Power Dissipation (Max): 350mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V |
на замовлення 5543 шт: термін постачання 21-31 дні (днів) |
|
| PMZB200UNEYL |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1.4A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
Description: MOSFET N-CH 30V 1.4A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V
на замовлення 5543 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.70 грн |
| 16+ | 19.85 грн |
| 50+ | 14.30 грн |
| 100+ | 11.73 грн |